Mosfet Transistor IRF520NPbF

Description Mosfet Transistor IRF520NPbF

The Mosfet Transistor IRF520NPbF, an example of International Rectifier's fifth generation of HEXFETs, is designed with advanced process techniques to achieve exceptionally low resistance per silicon surface area. This product excels in fast switching speeds and is designed for robustness, making it an extremely efficient and reliable choice for a wide range of applications. Furthermore, the device is fully avalanche resistant and can operate at temperatures up to 175°C, making it suitable for demanding environments. The IRF520NPbF comes in TO-220 packaging, an industry standard known for its low thermal resistance and cost-effectiveness for applications up to approximately 50 watts. This makes the transistor ideal for commercial and industrial applications where reliability and efficiency are crucial.

Features Mosfet Transistor IRF520NPbF

• Advanced process technology for low on-resistance per silicon surface.
• Dynamic dv/dt rating, suitable for fast switching applications.
• Resistant to complete avalanches, making the device safe in extreme conditions.
• Can operate at temperatures up to 175°C, ideal for demanding industrial applications.
• Fast switching speed for efficient operation.
• TO-220 packaging offers low thermal resistance and is widely accepted in the industry.
• Lead-free, more environmentally friendly design.
• Maximum continuous drain current of 9.7A at a gate-source voltage of 10V.
• Drain-to-Source voltage (VDSS) of 100V and a static Drain-to-Source On-Resistance (RDS(on)) of 0.20Ω.
• Suitable for a wide range of applications from power management to switching controls.

datasheet: datasheet_irf520npbf