Mosfet Transistor IRLZ34N

Description Mosfet Transistor IRLZ34N

The IRLZ34N is an N-channel HEXFET® Power MOSFET. It has an extremely low switch-on resistance per silicon area and fast switching performance. It is a reliable module that can be used in various applications.

Features IRLZ34N

• Type: IRLZ34NPBF
• Transistor polarity: N channel
• Drain source voltage Vds: 55V
• Continuous Discharge Current ID: 27A
• At resistance distances (on): 0,035ohm
• Transistor case: TO-220AB
• Transistor mounting: through hole
• Rds (on) Test voltage Vgs: 10V
• Threshold voltage Vgs: 2V
• Power loss Pd: 56W
• Number of pins: 3 pins
• Operating temperature Max: 175 ° C
• Dynamic DV / DT rating
• Logic level gate drive
• Advanced process technology

Datasheet IRLZ34NPBF

datasheet