N Channel MOSFET 2N7000
€0,40 /€0,33 excl. VAT
8 in stock (can be backordered)
- Free shipping from € 74,95 NL. (€ 99,95 BE / DE)
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Description N Channel MOSFET 2N7000
The 2N7000 is an N-Channel Enhancement Mode Field Effect Transistor. It is produced using high cell density DMOS technology. This very high density process is designed to minimize drag in the state. At the same time, it offers robust, reliable and fast shifting performance. It can be used in most applications requiring up to 400mA DC and can provide pulsed current up to 2A. It is also suitable for low voltage and low current applications such as:
Small servo motor driver, power MOSFET gate drivers and other switching applications.
Features 2N7000
- Transistor Polarity: N-Channel
- Drain source voltage Vds: 60V
- Continuous Discharge Current ID: 200mA
- On Resistance Rds (On): 5ohm
- Transistor case: TO-92
- Transistor mounting: through hole
- Rds (on) Test voltage Vgs: 10V
- Threshold voltage Vgs: 2.1V
- Power loss Pd: 400mW
- Number of pins: 3 pins
- Operating temperature Max: 150 ° C
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